GaInAs/InP large bandwidth (> 2 GHz) PIN detectors
- 4 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (16) , 611-612
- https://doi.org/10.1049/el:19830416
Abstract
Ga0.47In0.53As/InP heterophotodiodes are demonstrated with a bandwidth greater than 2 GHz, less than 0.5 pF capacitance, and subnanoampere dark current at the operating bias. These photodiodes satisfy criteria for both low noise and high speed in the 1 MHz–2 GHz bit-rate range for optical fibre telecommunicationsKeywords
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