40-GHz MMICs for optical modulator driver applications

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 1, 91-95 vol.1
https://doi.org/10.1109/mwsym.2002.1011566

Abstract

This paper presents the simulated and measured performance of 50 kHz to 40 GHz distributed amplifier MMICs. The chips were fabricated in a double-doped AlGaAs/InGaAs/AlGaAs p-HEMT technology and designed using a microstrip configuration.. The driver MMIC achieves 40-GHz bandwidth and provides 6.6 V/sub p-p/ which is ideal for lithium niobate optical modulator driver applications.

Keywords

OPTICAL MODULATION
MMICS
DRIVER CIRCUITS
STIMULATED EMISSION
SEMICONDUCTOR DEVICE MEASUREMENT
DISTRIBUTED AMPLIFIERS
INDIUM GALLIUM ARSENIDE
MICROSTRIP
BANDWIDTH
LITHIUM NIOBATE

This publication has 2 references indexed in Scilit:

A 100-kHz to 50-GHz traveling-wave amplifier IC module
IEEE Microwave and Guided Wave Letters, 1999
40-Gb/s high-power modulator driver IC for lightwave communication systems
IEEE Journal of Solid-State Circuits, 1998