On the Reverse‐Biased Capacitance of Step p+‐n Junctions with Traps
- 1 January 1968
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 27 (2) , 653-656
- https://doi.org/10.1002/pssb.19680270222
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- Properties of Silicon and Germanium: IIProceedings of the IRE, 1958
- Recombination in SemiconductorsProceedings of the IRE, 1958
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957