Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
Open Access
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
- Vol. 4 (S1) , 124-129
- https://doi.org/10.1557/s1092578300002337
Abstract
Pendeo-epitaxy of individual GaN and AlxGa12−xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. These structures have been characterized using scanning electron microscopy and atomic force microscopy. The RMS roughness value of the grown side wall plane (110) of these structures was 0.099 nm.Keywords
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