Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3° toward (111)A by molecular beam epitaxy
- 31 December 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 35 (1-3) , 295-298
- https://doi.org/10.1016/0921-5107(95)01338-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs SurfacesJapanese Journal of Applied Physics, 1995
- Structural analysis of AlGaAs quantum wires on vicinal (110)GaAs by transmission electron microscopy and energy dispersive X-ray spectroscopyJournal of Crystal Growth, 1995
- Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by PhotoluminescenceJapanese Journal of Applied Physics, 1995
- Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBEJournal of Crystal Growth, 1993
- Theory of luminescence polarization anisotropy in quantum wiresPhysical Review B, 1992