Displacive Phase Transition in Narrow-Gap Semiconductors
- 1 January 1976
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 40 (1) , 163-171
- https://doi.org/10.1143/jpsj.40.163
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Dielectric constant and soft mode of Pb1-xSnxTe by magnetoplasma reflectionSolid State Communications, 1975
- Carrier-Concentration Dependence of the Phase Transition in SnTeProgress of Theoretical Physics, 1975
- Phase Transition in SnTe with Low Carrier ConcentrationJournal of the Physics Society Japan, 1975
- Raman observation of the ferroelectric phase transition in SnTePhysical Review B, 1974
- Dielectric constant and soft mode of Pb1−xSnxTeSolid State Communications, 1974
- Fermi-Surface Studies in SnTePhysical Review B, 1972
- Relativistic Band Structure and Electronic Properties of SnTe, GeTe, and PbTePhysical Review B, 1969
- Pseudo‐Jahn‐Teller Effect and Second Order Phase Transitions in CrystalsPhysica Status Solidi (b), 1967
- Diatomic FerroelectricsPhysical Review Letters, 1966
- Band Edge Structure of PbS, PbSe, and PbTePhysical Review B, 1964