Structure and Nucleation Mechanism of Nickel Silicide on Si(111) Derived from Surface Extended-X-Ray-Absorption Fine Structure
- 26 December 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (26) , 2402-2405
- https://doi.org/10.1103/physrevlett.51.2402
Abstract
Based on the direct structure determination of the silicide formed at room temperature from <1 monolayer of Ni deposited on Si(111) and from Ni coverages up to 5 monolayers, a model for silicide growth and interface formation is presented. The model forms a basis for understanding many of the photoemission, ion scattering, and microscopy results from this system.Keywords
This publication has 18 references indexed in Scilit:
- First phase nickel silicide nucleation and interface structure at Si(100) surfacesJournal of Vacuum Science & Technology A, 1983
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982
- Diffusion-layer microstructure of Ni on Si(100)Physical Review B, 1982
- Electronic structure of nickel silicidesSi, NiSi, and NiPhysical Review B, 1982
- Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin filmsSolid State Communications, 1982
- Ni on Si: Interfacial compound formation and electronic structurePhysical Review B, 1982
- Transition metal silicides: aspects of the chemical bond and trends in the electronic structureJournal of Physics C: Solid State Physics, 1981
- Metal/silicon interface formation: The Ni/Si and Pd/Si systemsJournal of Vacuum Science and Technology, 1981
- Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium IonsPhysical Review Letters, 1981
- Ni on Si(111): Reactivity and Interface StructurePhysical Review Letters, 1980