(AlAs)(GaAs) Fractional-layer superlattices grown on (001) vicinal GaAs substrates by MOCVD
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 20-23
- https://doi.org/10.1016/0039-6028(90)90249-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrateJournal of Crystal Growth, 1989
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989
- MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum WellsJapanese Journal of Applied Physics, 1988
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor depositionJournal of Vacuum Science & Technology B, 1988
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984