0.7 W X-Ku-band high-gain, high-efficiency common base power HBT
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 1 (9) , 258-260
- https://doi.org/10.1109/75.84606
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- 2.5 W CW X-band heterojunction bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ku-band high efficiency high gain pseudomorphic HEMTElectronics Letters, 1991
- Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHzIEEE Transactions on Microwave Theory and Techniques, 1990
- AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off processIEEE Electron Device Letters, 1987