Growth and characterization of cubic GaN
- 1 June 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 178 (1-2) , 113-133
- https://doi.org/10.1016/s0022-0248(97)00084-5
Abstract
No abstract availableKeywords
This publication has 71 references indexed in Scilit:
- Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1−xAlxNJournal of Applied Physics, 1996
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well DeviceJapanese Journal of Applied Physics, 1995
- Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Metalorganic molecular beam epitaxy of cubic GaN on (100)GaAs substrates using triethylgallium and monomethylhydrazineJournal of Crystal Growth, 1995
- Surface orientation dependence of growth rate of cubic GaNJournal of Crystal Growth, 1994
- Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaNPhysical Review B, 1994
- Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substratesApplied Physics Letters, 1994
- Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen sourceJournal of Crystal Growth, 1994
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAsJapanese Journal of Applied Physics, 1994
- Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compoundsJournal of Crystal Growth, 1992