10 Gbit/s AND gate using dual-gate GaAs MESFET

5 March 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (5) , 201-202
https://doi.org/10.1049/el:19810142

Abstract

Using a commercial dual-gate GaAs MESFET transistor mounted in a microstrip circuit, an AND gate has been built. With the 100 ps (FWHM) wide test pulses available, a speed of 10 Gbit/s NRZ and a pulse suppression of at least 14 dB was obtained.

Keywords

10 GBIT/S AND GATE
NRZ
GAAS MESFET
PULSE SUPPRESSION
III-V SEMICONDUCTOR
MICROSTRIP CIRCUIT