Electronic structure of CdTe nanocrystals: A tight-binding study

Preprint

9 February 1999

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9902118

Abstract

We present a symmetry-based calculation of the electronic structure of a compound semiconductor quantum dot (QD) in the sp^3s* tight-binding model including the spin-orbit interaction. The Hamiltonian matrix is diagonalized exactly for CdTe QD sizes up to 60 {\AA}. The surface dangling bonds are passivated by hydrogen through a careful analysis of the density of states and wave functions. The calculated size dependence of the energy gap shows a reasonable agreement with the available experimental data. Our symmetry analysis indicates that, in contrast with a reported prediction of the three-band effective-mass model, the fundamental interband transition remains dipole-allowed in CdTe nanocrystals.

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Version 1, 1999-02-09, ArXiv
Published version: Solid State Communications, 110 (5), 259.

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