Zeeman splitting of the excitonic recombination in As/GaAs single quantum wells
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (12) , 8889-8892
- https://doi.org/10.1103/physrevb.50.8889
Abstract
We report magnetoluminescence investigations of undoped As/GaAs single quantum wells. At the highest available magnetic fields (11 T) the excitonic recombination shows well resolved spin splittings. For low indium content the splitting is dominated by the heavy-hole valence-band splitting as confirmed experimentally. The theoretical analysis allows us to determine the electron as well as the heavy-hole g values in As on GaAs within the composition range 0<x<0.27 for quantum well thickness >120 Å.
Keywords
This publication has 20 references indexed in Scilit:
- Superlattice modification of the valence-band spin splitting inInxGa1−xAs/GaAs superlattices up to 45 TPhysical Review B, 1993
- Magneticgfactor of electrons in GaAs/As quantum wellsPhysical Review B, 1991
- Extremeg-factor anisotropy induced by strainPhysical Review B, 1991
- Valence band spin splitting in strained In0.18Ga0.82As/GaAs quantum wellsSemiconductor Science and Technology, 1991
- Two-dimensional spin confinement in strained-layer quantum wellsPhysical Review B, 1990
- Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructuresPhysical Review B, 1989
- Exchange enhancement of the spin splitting in a GaAs-As heterojunctionPhysical Review B, 1988
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976
- Theory of Oscillatory g Factor in an MOS Inversion Layer under Strong Magnetic FieldsJournal of the Physics Society Japan, 1974
- Factor of the Two-Dimensional Interacting Electron GasPhysical Review B, 1969