Analysis of high speed p-i-n photodiode S-parameters by a novel small-signal equivalent circuit model

Abstract
A novel small-signal radio frequency (RF) equivalent-circuit of the side-illuminated input tapered waveguide-integrated p-i-n photodiodes (WG PIN PD) is proposed. The proposed RF equivalent-circuit involves both the carrier-transit effect and the external resistance-capacitance (RC) time constant limitation on the frequency response of the p-i-n PD. The carrier-transit effect is realized by adding an RC circuit to an ideal voltage-controlled current source as the input opto-RF equivalent circuit. The carrier transit-time effect is equivalently represented by the time-constant of this input RC circuit. This new equivalent circuit model fits well with both the measured reflection and optoelectronic conversion parameters of the WG PIN PD in a broad frequency range from 45 MHz to 50 GHz.

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