Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass

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Abstract
The phase transitions from the amorphous to crystalline states, and vice versa, of Se–Sb–Te films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as a means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich structure (metal/chalcogenide thin film/metal). More than 104 write/erase cycles were attained by applying electric pulses. In this case, the voltage and pulse width of crystallization and amorphization processes were 2.4 V, 2.0 µs, 2 V and 0.1 µs, respectively. The melting point of the Se–Sb–Te system is lower than that of the Ge–Sb–Te system, so that the current density for the amorphization process can be decreased to about 30 mA/µm2.

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