Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon
- 3 November 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (18) , 1160-1162
- https://doi.org/10.1063/1.97453
Abstract
Explosive crystallization of Cu implanted amorphous silicon during irradiation by a 32-ns FWHM ruby laser pulse has been studied using time-resolved reflectivity measurements and Rutherford backscattering spectrometry. From interferences in the reflectivity, the position and the velocity of the self-propagating melt have been deduced as a function of time. A maximum average velocity of 13±2 m/s has been obtained. The reflectivity behavior indicates the presence of crystalline nuclei in the melt.Keywords
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