High power density pulsed X-band heterojunction bipolar transistors

17 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (2) , 148-149
https://doi.org/10.1049/el:19910096

Abstract

Abrupt junction Npn AlGaAs/GaAs heterojunction bipolar transistors giving 10GHz output power density of 6.2mW/μm² (18.7W per mm emitter length) are reported. Pulse length was 300nS with 33% duty cycle. Associated gain and power-added efficiency were 5.0dB and 46%, respectively. Associated peak power was 561mW. Peak and average powers were measured as a function of pulse length at fixed duty cycle and found to increase sharply from CW values for pulse lengths less than 1000nS.

Keywords

5 DB
POWER-ADDED EFFICIENCY
PULSE LENGTH
ASSOCIATED TRANSISTOR GAIN
10 GHZ
ASSOCIATED PEAK TRANSISTOR POWER
46 PERCENT
5.2 TO 10.9 GHZ
NPN ALGAAS-GAAS HETEROJUNCTION BIPOLAR TRANSISTOR
DUTY CYCLE
HIGH POWER DENSITY PULSED X-BAND TRANSISTORS
561 MW
OUTPUT POWER DENSITY
300 NS

This publication has 1 reference indexed in Scilit:

2.5 W CW X-band heterojunction bipolar transistor
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003