Two-dimensional simulation of sub-μm GaAs MESFETs with ion-implanted doping
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1719-1722
- https://doi.org/10.1016/0038-1101(89)90301-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Simulation of submicrometer GaAs MESFET's using a full dynamic transport modelIEEE Transactions on Electron Devices, 1988
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970