Diode characteristics and degradation mechanism of ion implanted polyacetylene films
- 1 October 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 61 (4) , 466-471
- https://doi.org/10.1016/0168-583x(91)95324-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Gap states of charged solitons in polyacetylenePhysical Review B, 1989
- Low energy ion implantation studies of polyacetylene filmsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Evidence of implantation doping in polyacetyleneNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- New process for the production of metal-like, stable polyacetyleneSynthetic Metals, 1987
- Fabrication of a stable p–n junction in a polyacetylene film by ion implantationJournal of the Chemical Society, Chemical Communications, 1985
- Application of ion implantation for doping of polyacetylene filmsApplied Physics Letters, 1984
- Synthesis and characterization of new organic metals formed by interaction of FeCl3 with polyacetylene (CH)x and poly(para)phenylene (C6H4)xMaterials Research Bulletin, 1981
- ‘Organic metals.’ Reaction of FeCl3with polyacetylene, (CH)x, and poly-(p-phenylene), (p-C6H4)xJournal of the Chemical Society, Chemical Communications, 1981
- Soliton excitations in polyacetylenePhysical Review B, 1980
- Solitons in PolyacetylenePhysical Review Letters, 1979