Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures
- 1 January 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (1) , 154-157
- https://doi.org/10.1116/1.587174
Abstract
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