Studies of the Si-SiO2 interface by MeV ion channeling
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (11) , 859-861
- https://doi.org/10.1063/1.90983
Abstract
By performing backscattering‐channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800 °C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si‐SiO2 interface. The results indicate an abrupt Si‐SiO2 interface with one to two monolayers of Si reconstruction.Keywords
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- Preparation of thin windows in silicon masks for x-ray lithographyJournal of Applied Physics, 1975
- Lattice Location by Channeling Angular Distributions: Bi Implanted in SiPhysical Review B, 1972