Variable-shaped electron-beam direct writing technology for 1-µm VLSI fabrication

1 November 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (11) , 1279-1284
https://doi.org/10.1109/T-ED.1981.20600

Abstract

A 1-µm 256K MOS RAM has been fabricated using a variable-shaped electron-beam (EB) direct writing technology. EB drawing data are prepared using a new program, PEBL, which includes a new algorithm for shot division. PEBL plays an important role in obtaining high EB system throughput and high quality patterns. A new proximity correction technique, DCA, has also been proposed. This technique is simple and very effective in fabricating 1-µm VLSI patterns. Negative resist CMS or positive resist FPM are used appropriately, according to process levels. In fabrication of a 1-µm 256K MOS RAM, ±0.2-µm overlay accuracy and ±0.1-µm linewidth accuracy were achieved.

Keywords

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