Field-effect Transistor Transient Analysis
- 1 April 1965
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 18 (4) , 313-324
- https://doi.org/10.1080/00207216508937770
Abstract
The differential equation describing transient switching processes in the field-effect transistor is derived. Approximate solutions, valid over a small range of bias voltages, are obtained. Numerical examples are presented, and it is demonstrated that the transient properties can be summarized by a characteristic time constant T0. This time constant can be estimated readily from a manufacturer's data sheet. If the input voltage waveform changes take place in times of the order of 10 T0, the transients are shown to be negligible, so that the output current waveform can be obtained using the steady-state relationship between bias voltages and currents.Keywords
This publication has 1 reference indexed in Scilit:
- Gate noise in field effect transistors at moderately high frequenciesProceedings of the IEEE, 1963