Magnetic-Field Dependence of the Rf Skin Depth of Gallium

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Abstract
The variation with magnetic field of the surface reactance of gallium single crystals at 2 Mc/sec has been investigated at helium temperatures and for fields up to 1500 G. The changes observed in the surface reactance depend in a very complicated way upon magnetic field, and correspond to variations of nearly 100% in the skin depth. The field dependence of the skin depth was found to depend upon specimen orientation, the mean free path of the charge carriers, and rf magnetic field amplitude. A number of small anomalies in the surface impedance have been identified as the rf size effect first reported by Gantmacher for tin.

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