High-Rate Reactive Ion Etching of SiO2 Using a Magnetron Discharge
- 1 November 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (11) , L817
- https://doi.org/10.1143/jjap.20.l817
Abstract
A magnetron discharge has been used for high-rate reactive ion etching. A SiO2 wafer situated on the cathode was etched by scanning a rectangular permanent magnet under the cathode coupled with a power of 13.56 MHz which generated an intense plasma loop over the cathode. The SiO2 etch rate of 1.1 µm/min and the SiO2/Si selective ratio of 9.5 was achieved by employing CHF3 under a magnetic field of 1 k Gauss and an input rf power of 1.6 W/cm2. This condition lowers the ion bombarding voltage of 80 Å on the Si surface. The plasma scanning and an electrostatic chacking of the wafer to the wafer-cooled cathode produces an anisotropic etched feature without photoresist degradation.Keywords
This publication has 2 references indexed in Scilit:
- High rate reactive ion etching of Al2O3 and SiJournal of Vacuum Science and Technology, 1980
- Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2Journal of the Electrochemical Society, 1979