Electrical properties of proton and deuterium ion implanted n-type GaAs
- 1 May 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5) , 2935-2936
- https://doi.org/10.1063/1.327967
Abstract
Carrier removal in n-type GaAs induced by proton and deuterium bombardment has been investigated using capacitance-voltage profiling techniques. It is shown that deuterium offers advantages over hydrogen implantation, that ’’cold’’ (30 K) implants are superior to room temperature implants, and that carrier removal depth appears to be dose dependent, or dose and dose rate dependent.This publication has 2 references indexed in Scilit:
- Multiple-energy proton bombardment in n+-GaAsSolid-State Electronics, 1977
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972