The thickness dependence of excess carrier lifetime and mobility in amorphous silicon junctions
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (5) , L83-L88
- https://doi.org/10.1080/13642812.1983.11643270
Abstract
Fast transient methods have been used to determine the electron drift mobility μe and lifetime τe in a-Si p-i-n junctions ranging in thickness from d ≃ 0·4 to 15 μm Similar data were obtained for holes on the thinner specimens. For d e τe ≃ μh, τh and both are proportional to d2. It is shown that the thickness dependence of μe τh arises almost entirely from that of τe. For d≳ 10 μm, τe tends towards a constant value of 1–2 μs, which represents the true electron lifetime of the material with respect to deep centres. The free lifetime is about 100ns. A possible explanation for the observed thickness dependence of μe τe is given.Keywords
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