GaSb Photodiode for detection of 1.73 μm radiation of Er:YLF laser

30 September 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (20) , 859-860
https://doi.org/10.1049/el:19820583

Abstract

We have developed a GaSb photodiode for receiving the 1.73 μm radiation of a solid-state laser (Er:YLF). The diode layers have been grown by LPE on (100)-oriented Te-doped GaSb substrates. The peak value of the responsivity of the diodes is 0.55 A/W at a wavelength of 1.73 μm corresponding to a quantum efficiency of 40%. The best RA product of the diodes is 83 Ωcm². The data are obtained without anti-reflection coating.

Keywords

IR PHOTODIODES
LPE
DETECTION WAVELENGTH 1.73 MICRON
ER:LIYF4 LASER
QUANTUM EFFICIENCY
RESPONSIVITY
ER:YLF LASER
NEAR IR REGION
RA PRODUCT
GASB PHOTODIODE
TE:GASB SUBSTRATE

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