Temperature Dependence of the Dynamic Response of Si, Ge, and InSb to a Pulsed Electron Beam

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Abstract
One material parameter used in describing the thermoelastic response of a material exposed to a pulsed energy deposition is the Grüneisen parameter. At room temperature this parameter is constant for many materials, but at lower temperatures it varies in both magnitude and sign for some materials, e. g., covalent‐bonded cubic crystals. In this study, a generalized form of the Mie‐Grüneisen equation of state was used to describe the response of that type crystal to pulsed electron‐beam exposure as a function of initial temperature. In addition, the predicted responses of Si, Ge, and InSb are compared with the responses measured with a laser interferometer for several initial temperatures between 20 and 300 °K. The measured and predicted responses agree with each other well enough to indicate that an adequate response description using a temperature‐dependent Grüneisen parameter was developed.