Narrowband frequency control of an injection-locked diode-laser battery

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Abstract
We report the generalization of the optical injection locking procedure to a battery of high power diode lasers. To illustrate the principle, two 50 mW cw single-mode GaAlAs multiple quantum well structure diode lasers have been injection-locked to a low power cw single-mode diode laser. In the presence of a large number of slave lasers, the isolation of the master one becomes more critical, but the injection conditions are not changed dramatically. A typical locking bandwidth of 3 GHz is obtained for an injection power of 20 μW. Significant locking is still observed for 0.5 μW injection. Injection-locked high power laser beams can be obtained with RF range frequency offsets by injection through acousto-optical modulators, offering a large number of potential applications

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