Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 532-535
- https://doi.org/10.1016/0022-0248(92)90808-v
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electron beam excitation of II–VI compound strained layer superlatticesJournal of Luminescence, 1991
- Structure of hexagonal and cubic CdS heteroepitaxial layers on GaAs studied by transmission electron microscopyApplied Physics Letters, 1989
- Excitonic transitions in ZnSe epilayers grown on GaAsPhysical Review B, 1988
- Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour depositionJournal of Crystal Growth, 1988