A simple and accurate approximation to the high-frequency characteristics of insulated-gate field-effect transistors
- 31 October 1969
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (10) , 826-829
- https://doi.org/10.1016/0038-1101(69)90060-4
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Numerical data on the high-frequency characteristics of thin-film transistorsSolid-State Electronics, 1965
- A Small-signal, High-frequency Analysis of the Insulated-gate Field-effect Transistor†International Journal of Electronics, 1965
- Calculation of high-frequency characteristics of thin-film transistorsSolid-State Electronics, 1965