Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon

1 January 1984

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 85 (3) , 117-122
https://doi.org/10.1080/01422448408210073

Abstract

Depth distribution profiles of 15 to 350 keV ⁶⁹Ga+ implanted at room temperature in amorphized silicon have been measured by ⁴He ion Rutherford backscattering. The measured projected ranges and range stragglings are in excellent agreement with the predictions calculated via realistic Monte Carlo simulations, TRIM code.

Keywords

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