High speed and high power AlGaN/GaN MODFETs
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 142-143
- https://doi.org/10.1109/drc.1997.612505
Abstract
Device optimization of AlGaN/GaN MODFETs has resulted in a record high f/sub T/ of 50 GHz for a GaN based FET and a record high CW power density of 2.54/spl sim/2.84 W/mm in X band for a solid-state FET.Keywords
This publication has 3 references indexed in Scilit:
- Recent advances in III-V nitride electron devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 VIEEE Electron Device Letters, 1997
- Measured microwave power performance of AlGaN/GaN MODFETIEEE Electron Device Letters, 1996