Multiple-pass thin-film silicon solar cell
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (11) , 647-648
- https://doi.org/10.1063/1.1655344
Abstract
A technique is described by which light entering a thin film is ``trapped'' in the sense of having to traverse the film a number of times. It is shown that the use of this technique in silicon provides a solar cell with good carrier collection efficiencies even with Si only ∼2 μm thick and with ∼10‐nsec lifetime.Keywords
This publication has 6 references indexed in Scilit:
- Vacuum Deposited Silicon Devices on Fused Silica SubstratesJournal of the Electrochemical Society, 1974
- Silicon-on-sapphire with microsecond carrier lifetimesApplied Physics Letters, 1973
- Ellipsometry and the clean surfaces of silicon and germaniumSurface Science, 1971
- Growth of controlled profile crystals from the melt: Part II - Edge-defined, film-fed growth (EFG)Materials Research Bulletin, 1971
- A new look at silicon solar cell performanceEnergy Conversion, 1971
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971