Rapid-scan Fourier transform spectroscopy of 2-D space charge layers in semiconductors
- 31 May 1984
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 24 (2-3) , 189-197
- https://doi.org/10.1016/0020-0891(84)90069-1
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Two-dimensional plasmons in hole space charge layers on siliconSolid State Communications, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Plasmons in inversion layersSurface Science, 1980
- Frequency domain studies of intersubband optical transitions in Si inversion layersSolid State Communications, 1979
- High frequency conductivity in silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlatticeSurface Science, 1978
- Two-dimensional magnetoplasmon in the silicon inversion layerSolid State Communications, 1977
- Observation of the Two-Dimensional Plasmon in Silicon Inversion LayersPhysical Review Letters, 1977
- Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized RegimesPhysical Review Letters, 1975
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Polarizability of a Two-Dimensional Electron GasPhysical Review Letters, 1967