Sticking coefficient of the SiH2 free radical on a hydrogenated silicon-carbon surface

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Abstract
The sticking coefficient of SiH2 on a hydrogenated silicon‐carbon surface is measured in a low‐pressure pulsed‐photolysis experiment. Thermal and vibrationally excited SiH2 are created by infrared multiphoton decomposition of n‐butylsilane. The first‐order wall loss rates of the radicals are determined from the time dependence of the resonance‐enhanced multiphoton ionization signal. The sticking coefficients of SiH2 (∼0.1) and vibrationally hot SiH2 (>0.5) are determined from the measured first‐order loss rate constants and the calculated wall collision rate constant.