Ideal unreconstructed hydrogen termination of the Si(111) surface obtained by hydrogen exposure of the √3 × √3 -In surface

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Abstract
Hydrogen exposure of the Si(111)√3 × √3- In surface resulted in a replacement of the Si-In bonds by Si-H bonds as evidenced by core-level and angle-resolved photoelectron spectrsocopy. Saturation of the Si dangling bonds by hydrogen atoms led to the formation of an unreconstructed Si(111)1×1-H surface. Besides a peak due to Si-H bonds, a sharp peak, due to Si-Si backbonds, appeared in the valence-band spectra. The experimental dispersions of these states showed excellent agreement with calculated surface bands. The In atoms formed metallic islands on a small part of the surface (∼5%).