Optoelectronic sensors based on narrowband A3B5 alloys
- 1 March 1992
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 334-345
- https://doi.org/10.1117/12.56559
Abstract
LPE growth at elevated temperatures has been used to fabricate high-quality InAsSbP and InGaAs p-n structures, emitting light in the wavelength range 2.5 - 4.7 micrometers . New IR LEDs and photodiodes based on InAsSbP and InGaAs have been tested and used for detection of CH4, CO2, and other gases. Transmittance spectra measurements have been carried out in the 3.1 - 3.5 micrometers spectral range using a 1 X 15 LED array, diffraction grating, and photodetector. The wavelength range used is optimized for near infrared transmittance analysis of hydrocarbons and some other gases.Keywords
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