Observation of localized states in barrier regions of metal-insulator-metal tunnel junctions
- 15 February 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 13 (4) , 1377-1382
- https://doi.org/10.1103/physrevb.13.1377
Abstract
Small oscillatory structure in the tunnel conductance of Mg-insulator-metal junctions at very low temperatures is reported. Data on the effect of external influences such as thermal, voltage, and current annealing as well as application of a magnetic field are presented. The possibility that the structure may be due to resonant tnneling is discussed.Keywords
This publication has 27 references indexed in Scilit:
- Application of minicomputers in high resolution electron tunnelingReview of Scientific Instruments, 1975
- Etude de la nitruration du magnesium massifJournal of Nuclear Materials, 1972
- Observation of electron standing waves in Mg by tunnelingSolid State Communications, 1972
- Observation of Electron Standing Waves in a Crystalline BoxPhysical Review Letters, 1971
- Inelastic Electron Tunneling in Al-Al-Oxide-Metal SystemsPhysical Review B, 1969
- Phonon Emission and Self-Energy Effects in Normal-Metal TunnelingPhysical Review B, 1969
- Molecular Vibration Spectra by Inelastic Electron TunnelingPhysical Review B, 1968
- Electron Tunneling through Asymmetric Films of Thermally Grown Al2O3Journal of Applied Physics, 1964
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963
- Single- and Double-Deformation Faults in Face-Centered Cubic CrystalsJournal of Applied Physics, 1963