Peierls instability in degenerate semiconductors under strong external magnetic fields
- 15 January 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (2) , 780-784
- https://doi.org/10.1103/physrevb.29.780
Abstract
The possibility of the occurrence of a Peierls-type transition in doped semiconductor chalcogenides (e.g., PbTe) under a strong external magnetic field is investigated within a theory that includes the effect of electron-impurity scattering. The effect of charged-impurity scattering is found to lower the transition temperature . For realistic material parameters corresponding to PbTe, a transition with reasonable values (∼1 K) of is found to be possible provided the impurity-induced level broadening is not too large. Experimental consequences of such an instability are discussed qualitatively.
Keywords
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