Many-electron model of equilibrium metal-semiconductor contacts and semiconductor heterojunctions
- 15 January 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (2) , 1118-1133
- https://doi.org/10.1103/physrevb.33.1118
Abstract
A many-electron model is proposed to describe the electronic structure of metal-semiconductor interfaces and semiconductor heterojunctions. The model is utilized to calculate the self-consistent one-electron potential in the vicinity of the interface. This potential arises from two sources: a short-range dipole contribution due to valence-electron rearrangements at the interface relative to the corresponding vacuum surfaces, and a long-range space-charge contribution caused by band-bending effects extending thousands of angstroms from the interface.Keywords
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