Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures
- 1 January 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (1) , 119-124
- https://doi.org/10.1007/bf02670931
Abstract
No abstract availableKeywords
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