Influence of inhomogeneous injection on sidemode suppression in strongly coupled DFB semiconductor lasers

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Abstract
A longitudinally nonuniform injection counteracting the spatial hole burning in quarter-wavelength shifted DFB semiconductor lasers with strong coupling has been obtained from a quasi-three-dimensional model. This effect enlarges with falling series resistances. It substantially lowers the degradation of sidemode suppression compared with former models that assume homogeneous injection.