Advantages of InGaAsP separate confinement layer in 0.98 μm InGaAs/GaAs/InGaP strained DQW lasers for high power operation at high temperature
- 13 August 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (17) , 1639-1640
- https://doi.org/10.1049/el:19921043
Abstract
The advantages of 0.98 μm InGaAs/GaAs/InGaP lasers with an InGaAsP SCH layer were investigated by comparing them with identical lasers with a conventional GaAs SCH layer. A higher internal quantum efficiency of 0.817 and low internal loss of 2.11 cm−1 were obtained due to the large conduction band discontinuity. Moreover, high power operation of 80 mW from an uncoated facet was obtained up to 70°C with the laser with the InGaAsP SCH layer.Keywords
This publication has 1 reference indexed in Scilit:
- High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990