The microwave spectrum of SiF+
- 1 November 1988
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 89 (9) , 5454-5459
- https://doi.org/10.1063/1.455597
Abstract
The first detection of the silicon monofluoride cation by spectroscopic means has been achieved at millimeter and submillimeter wavelengths. Frequencies of rotational transitions spanning a range of J values from 1 to 14 and all vibrational states from v=0 to 15 were precisely measured. Lines of 29 SiF+ up to v=4 and 30 SiF+ up to v=3 were also included in this study. These data were all well fit by a standard Dunham expansion with eight terms, with no requirement for a Watson type ΔSi01 parameter, describing breakdown of the Born–Oppenheimer approximation, to explain the isotope dependence. The parameters Be (or re ), ωe , and the Dunham potential constants a1 –a5 were well determined from this analysis and showed very satisfying agreement with the results of our recent large basis set MP4SDQ and CI calculations, which we had used to determine the search range for locating the spectrum of SiF+ . The final results are re =1.526 495 0(2) Å and ωe =1050.7(2) cm−1.Keywords
This publication has 31 references indexed in Scilit:
- Energetics and dynamics in the reaction of Si+ with SiF4. Thermochemistry of SiFx and SiF+x (x=1, 2, 3)The Journal of Chemical Physics, 1988
- Absolute cross sections for electron-impact ionization and dissociative ionization of the SiF free radicalThe Journal of Chemical Physics, 1988
- Reactions of cationic silicon clusters with xenon difluorideThe Journal of Chemical Physics, 1987
- Enzymatic biotin-mediated carboxylation is not a concerted processJournal of the American Chemical Society, 1986
- Chemical bonding of polyatomic-ion implants in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of ion bombardmentJournal of Vacuum Science & Technology B, 1983
- Secondary Ion Analysis of Silicon under Ar+ Ion Etching in Chlorine and Fluorine FluxJapanese Journal of Applied Physics, 1983
- Gaseous ion reactions in SiF4 and SiF4–D2 mixturesJournal of Applied Physics, 1983
- Mass and energy distribution of particles sputter etched from Si in a XeF2 environmentApplied Physics Letters, 1982
- F2 adsorption on Si observed with SIMS and QCMJournal of Vacuum Science and Technology, 1982