Adsorption of water on Si(001)-2 × 1 and Si(111)-7 × 7 surfaces at 90 and 300 K: A Si 2p core-level and valence band study with synchrotron radiation
- 10 September 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 338 (1-3) , 143-156
- https://doi.org/10.1016/0039-6028(95)00501-3
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Atomic origins of the surface components in the Si 2pcore-level spectra of the Si(111)7×7 surfacePhysical Review B, 1994
- SiCore-Level Spectroscopy of the Si(111)-(1 × 1):H and Si(111)-(1 × 1):D Surfaces: Vibrational Effects and Phonon BroadeningPhysical Review Letters, 1994
- Evidence for site-sensitive screening of core holes at the Si and Ge (001) surfacePhysical Review Letters, 1993
- Si(100)-(2×1) surface defects and dissociative and nondissociative adsorption ofO studied with scanning tunneling microscopyPhysical Review B, 1993
- Electronic structure and its dependence on local order for H/Si(111)-(1×1) surfacesPhysical Review Letters, 1993
- The interaction of molecular and atomic oxygen with Si(100) and Si(111)Surface Science Reports, 1993
- Water on Si(111)7×7: Anin situstudy with electron-energy-loss and photoemission spectroscopiesPhysical Review B, 1986
- Evidence of dissociation of water on the Si(100)2 × 1 surfacePhysical Review B, 1984
- Chemisorption ofO on Si(100)Physical Review B, 1983
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972