High-speed Si/SiGe technology for next generation wireless system applications

Abstract
Si/SiGe integrated circuit technology represents a revolutionary opportunity to combine high-performance digital, analog, and rf circuits on a common substrate. The outstanding high-frequency performance of the Si/SiGe devices, combined with the high levels of integration of complementary metal–oxide–semiconductors will contribute to a long-term “paradigm shift” in the architectural partitioning of high-frequency high-performance wireless systems. This article outlines the key future systems applications for the technology.

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