Modeling impact ionization in advanced bipolar transistors for device/circuit simulation

Publisher Website

6 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/bipol.1988.51057

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
IEEE Transactions on Electron Devices, 1985
Problems related to p-n junctions in silicon
Solid-State Electronics, 1961