Electron-spectroscopy investigation of theBi2Sr2CaCu2O8andBi2Sr2CaCu2O8+ysingle-crystal cleaved surfaces
- 1 August 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (5) , 3727-3733
- https://doi.org/10.1103/physrevb.52.3727
Abstract
This paper presents spectroscopic investigations of the normal-state properties of and single crystals. Ultraviolet photoemission and electron energy loss data are consistent with the filling in of the charge transfer gap upon doping due to spectral weight transfer mechanisms. The modifications occurring in the surface electronic properties after exposure to pure and after the deposition of one monolayer of bismuth are studied and discussed.
Keywords
This publication has 57 references indexed in Scilit:
- O 1s core levels in single crystalsPhysical Review B, 1991
- Growth and properties of oxygen- and ion-doped single crystalsPhysical Review B, 1990
- Surface electronic properties on BiO plane of Bi2Sr2CaCu2O8 single crystal measured by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- On the Superconducting Energy Gap in Bi 2 Sr 2 CaCu 2 O 8 Investigated by High-Resolution Angle-Resolved PhotoemissionEurophysics Letters, 1989
- Electronic structure of the high-temperature oxide superconductorsReviews of Modern Physics, 1989
- Photoelectron energy-loss study of the superconductorPhysical Review B, 1989
- Nature of the states near the Fermi level of the layered superconductors of and CuPhysical Review B, 1989
- Surface structure of Bi2Sr2CaCu2O8+δ high-temperature superconductors studied using low-energy electron diffractionApplied Physics Letters, 1988
- Electronic structure of Bi-Ca-Sr-Cu-O superconductors studied by photoelectron spectroscopyPhysical Review B, 1988
- Scanning tunneling microscopy of the a-b planes of Bi2(Ca,Sr)3Cu2O8+δ single crystal and thin filmApplied Physics Letters, 1988